Wafer level packaging

ABSTRACT

Through vias in a substrate are formed by creating a trench in a top side of the substrate and at least one trench in the back side of the substrate. The sum of the depths of the trenches at least equals the height of the substrate. The trenches cross at intersections, which accordingly form the through vias from the top side to the back side. The through vias are filled with a conductor to form contacts on both sides and the edge of the substrate. Contacts on the backside are formed at each of the trench. The through vias from the edge contacts. Traces connect bond pads to the conductor in the through via. Some traces are parallel to the back side traces. Some traces are skew to the back side traces. The substrate is diced to form individual die.

This application is a divisional of U.S. application Ser. No.10/232,267, filed Aug. 28, 2002, which claims priority under 35 U.S.C.119 from Singapore Application No. 200203615-0, filed Jun. 14, 2002.These applications are incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to wafer level packaging techniques andstructures. More particularly, the present invention relates to formingvias in a wafer level package.

BACKGROUND OF THE INVENTION

Wafer level packaging provides a complete electronic device package atthe wafer level. This provides a package having a high density ofintegrated circuits in a small or ultra-thin profile package. Electronicdevices and associated software applications continue to demand morememory and processing power from chip packages. However, electronicdevices that use such chip packages have continued to shrink. Thus, thedemand for integrated circuit packages having a high density in asmaller package has also increased. While it is desirable to design anew die that meets all of the needs of the market, such a design may notbe feasible or ready for market. Thus, dies or chips are connectedtogether, e.g., stacked, to achieve the desired density and electroniccapacity. Wafer level packaging is used to meet these demands. However,most wafer level packaging processes have not had industrial success assuch processes require a significant amount of wafer thinning followedby etching or laser drilling processes to create through holes in thewafer level package.

SUMMARY OF THE INVENTION

The present invention includes methods for creating a through via in asubstrate and the resulting structures. Trenches are mechanically formedin the two sides of a substrate. Where the trenches cross through viasor holes are formed. In an embodiment, the method includes sawing into afabrication side of a substrate and sawing into a backside of thesubstrate so that the sawing on the fabrication side and sawing on thebackside cross each other to form the via. The depths of the sawing intothe two sides of the substrate are at least equal to the height of thesubstrate. In an embodiment, the substrate is a wafer that includes aplurality of dies each containing integrated circuits. The integratedcircuits, in various embodiments, form memory devices, logic circuitsand/or processor circuits.

In an embodiment, the method of the present invention includes formingtrenches on a first side of the substrate and forming trenches on asecond side of the substrate to form the through vias at theintersection of the trenches. Forming includes mechanically forming thetrenches. In an embodiment, the trenches on one side are orthogonal tothe trenches on the other side. In an embodiment, trenches on afabrication side of the substrate are formed in saw streets. In anembodiment, the trenches formed on the back or non-active side of thesubstrate are formed beneath the dies or integrated circuits. Thus, theintersections of the trenches that form the through vias are in the sawstreets. The dimensions of the through vias are determined by the widthsof the trenches formed on each side of the substrate. The widths of thetrenches are determined by the widths of the mechanical cutter used tocreate the respective trench. The through vias include a conductormaterial to form a contact or communication line from the top side ofthe substrate to the back side. In an embodiment, contacts are formed inthe back side trenches, which contacts are connected to the conductormaterial in the through vias.

Methods and structures of the present invention further include thenumber of trenches formed in the back side of the substrate and how theback side trenches relate to the die components. In an embodiment, thenumber of trenches formed in the back side of the substrate are equal toor less than the number of bond pads on the dies. In an embodiment, thenumber of trenches formed in the back side of the substrate are equal tohalf the number of bond pads. The bond pads are connected to one throughvia that is positioned adjacent the respective die. Traces connect thebond pads to the through vias. In an embodiment, the traces are formedso that they alternate which sides of the die they extend to and thus,adjacent bond pads are connected to conductors in through vias onopposite sides of the die. In an embodiment, some traces are parallel totrenches in the back side of the substrate. In an embodiment, some ofthe traces are skew to trenches in the back side of the substrate.

In an embodiment, the method of creating a via through a wafer includesproviding a substrate with at least one integrated circuit, forming afirst trench in the top side of the substrate, and forming a secondtrench in the back side of the substrate so that the second trenchcrosses the first trench to form a through via. In an embodiment, aconductor is inserted in the through via to extend from the top side tothe back side. This forms an edge contact and provides a connection fromthe fabrication side of the substrate to a contact on the back side ofthe substrate. In an embodiment, bond pads are on the substratefabrication side. The bond pads are connected to the conductor. In anembodiment, a back side contact is formed at one end of the secondtrench and connected to the conductor. In an embodiment, back sidecontacts are formed at each end of the back side trench. In anembodiment, the method further includes backgrinding the back side ofthe substrate so that the back side is essentially coplanar to the backside contact.

An embodiment of the present invention provides a method for stackingintegrated circuit devices. The method includes providing a firstsubstrate including a plurality of first integrated circuit devicesseparated by streets, forming first trenches in the streets on a topside of the first substrate, and forming second trenches on the backsideof the first substrate so that the second trenches and first trenchesintersect to form through vias from the top side to the backside of thefirst substrate. In an embodiment, the method further includes insertinga conductor into the through vias to form contacts on the top side andthe backside, connecting the conductor to at least one of the pluralityof first integrated circuit devices. A second substrate, which includesa plurality of second individual integrated circuit devices separated bystreets, is connected to the first substrate. In an embodiment, theplurality of second integrated circuit devices are connected to thefirst plurality of integrated circuit devices. Connected pairs of theconnected first integrated circuit devices and second integrated circuitdevices are separated from the other pairs of connected first integratedcircuit devices and second integrated circuit devices. In an embodiment,the method includes forming third trenches in the streets on a top sideof the second substrate, forming fourth trenches on the backside of thesecond substrate so that the third and fourth trenches intersect to formthrough vias from the top side to the backside of the second substrate,and inserting a conductor into the through vias to form contacts on thetop side and the backside. In an embodiment, the method includesconnecting the conductor to at least one of the plurality of secondintegrated circuit devices. In an embodiment, the fourth trenches areformed beneath at least one of the second integrated circuit devices. Inan embodiment, the fourth trenches are linear. In an embodiment, thetrenches and saw streets of the first and second substrates are alignedprior to dicing.

An embodiment of the present invention is directed to a method offorming a substrate level package of two integrated circuit devices. Themethod includes providing a first substrate including a plurality offirst dies separated by streets, the first dies including bond pads onan active side of the substrate and traces connected to the bond pads,forming first trenches in the streets on a top side of the firstsubstrate, forming second trenches on the backside of the firstsubstrate so that the second trenches and first trenches intersect toform through vias from the top side to the backside of the firstsubstrate, and inserting a conductor into the through vias to formcontacts on the top side and the backside. The first substrate isconnected to a second substrate. In an embodiment, the first and secondsubstrate are formed the same. In an embodiment, the first and secondsubstrates are mirror images of each other. The method further includesconnecting the conductor to at least one of the bond pads using one ofthe traces. In an embodiment, the second substrate includes a pluralityof second individual integrated circuit devices separated by streets.The method further includes, in an embodiment, connecting the pluralityof second integrated circuit devices to the first plurality ofintegrated circuit devices and separating connected pairs of theconnected first integrated circuit devices and second integrated circuitdevices from the other pairs of connected first integrated circuitdevices and second integrated circuit devices. In an embodiment, themethod of the present invention includes encapsulating a pair of theconnected first integrated circuit device and second integrated circuitdevice. In an embodiment, the contacts to the pair of the connectedfirst integrated circuit device and second integrated circuit device areat the backside of one of the first and second integrated circuitdevices of the pair. Thus, the active device fabrication side of thesubstrates are connected together and aligned. In an embodiment, thebond pads of the first and second integrated circuit devices areconnected to provide communication between the devices. In anembodiment, the traces of the first and second integrated circuitdevices are connected to provide communication between the devices. Inan embodiment, the conductors in the through vias of the secondsubstrate are connected to the conductors in the through vias of thefirst substrate.

Further features and advantages of the present invention, as well as thestructure and operation of various embodiments of the present invention,are described in detail below with reference to the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a substrate having a plurality of die.

FIG. 2 is an elevational view of a partial wafer during a processingstep according to the present invention.

FIG. 3 is a view of the FIG. 2 partial wafer taken generally along line3-3 during a processing step according to the present invention.

FIG. 4 is a plan view of a wafer during processing thereof according tothe teachings of the present invention.

FIG. 5 is a top perspective view of a wafer according to the teachingsof the present invention.

FIG. 6 is a bottom perspective view of a wafer according to theteachings of the present invention.

FIG. 7A is a top view of a partial substrate according to a furtherembodiment of the present invention.

FIG. 7B is a top view of a partial substrate according to a furtherembodiment of the present invention.

FIG. 8A is a partial top perspective view of a FIG. 7A die.

FIG. 8B is a partial top perspective view of a FIG. 7B die.

FIG. 9 is a partial bottom perspective view of a die according to thepresent invention.

FIG. 10 is a partial view of the FIG. 9 die.

FIG. 11 is a partial view of the FIG. 10 die after a processing step.

FIG. 12 is a partial view of the FIG. 11 die after a processing step.top view of a die according to the further embodiment of the presentinvention.

FIG. 13A is a top view of an embodiment of a die after a processingstep.

FIG. 13B is a top view of an embodiment of a die after a processingstep.

FIG. 14 is a bottom view of a die according to an embodiment of thepresent invention.

FIG. 15 is a stacked assembly of a plurality of dies according to theteachings of the present invention.

FIG. 16 is perspective view of a wafer stack according to an embodimentof the present invention.

FIG. 17A is a cross sectional view of a partial wafer stack of thepresent invention.

FIG. 17B is a cross sectional view taken generally along line 17B-17B ofFIG. 17A.

FIG. 18 is a perspective view of a singulated die stack of the presentinvention.

FIG. 19 is a plan view of a package according to an embodiment of thepresent invention.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings which form a part hereof, and in whichis shown, by way of illustration, specific embodiments in which theinvention may be practiced.

These embodiments are described in sufficient detail to enable thoseskilled in the art to practice the invention. Other embodiments may beutilized and structural, logical, and electrical changes may be madewithout departing from the scope of the present invention. The termswafer and substrate used herein include any structure having an exposedsurface onto which a layer is deposited according to the presentinvention, for example, to form the integrated circuit (IC) structure.The term substrate is understood to include semiconductor wafers. Theterm substrate is also used to refer to semiconductor structures duringprocessing, and may include other layers that have been fabricatedthereupon. Both wafer and substrate include doped and undopedsemiconductors, epitaxial semiconductor layers supported by a basesemiconductor or insulator, as well as other semiconductor structureswell known to one skilled in the art. The term conductor is understoodto include semiconductors, and the term insulator is defined to includeany material that is less electrically conductive than the materialsreferred to as conductors. The following detailed description is,therefore, not to be taken in a limiting sense, and the scope of thepresent invention is defined only by the appended claims, along with thefull scope of equivalents to which such claims are entitled.

The present description employs a number convention where the first(left-most), most significant digit(s) are the same as the figure numberon which the numbers appear. Accordingly, like or similar elements willhave the same least significant digits. For example, the substrate,wafer, or base layer is designated by the convention X00, where “X” isthe figure number, e.g., 100, 200, 300, etc.

The present description uses the terms “top” and “back” when referringto the substrate on which integrated circuits are formed. The term “top”refers to the surface on which the layers that form an active integratedcircuit structure are formed. The term “back” refers to the region ofthe substrate beneath the surface on which active circuit structures areformed.

FIG. 1 shows a wafer 100 that includes a plurality of die 105 eachseparated from adjacent die by saw streets 108. The die 105 each includeintegrated circuits and contacts that provide communication between theintegrated circuits and circuits outside the substrate and die. The die105, in an embodiment, includes a memory circuit. The memory circuitincludes a dynamic random access memory (DRAM). In other embodiments thememory circuit includes at least one of SRAM (Static Random AccessMemory) or Flash memories. Additionally, the DRAM could be a synchronousmemory device such as SGRAM (Synchronous Graphics Random Access Memory),SDRAM (Synchronous Dynamic Random Access Memory), SDRAM II, and DDRSDRAM (Double Data Rate SDRAM), as well as Synchlink or Rambus DRAMs andother emerging memory technologies as known in the art. The integratedcircuits of the die 105, in an embodiment, define logic circuits. Die105 may further include a processor. The die 105, in an embodiment,include a system on a chip, which has a plurality of differentintegrated circuit structures, e.g., logic circuits and memory circuits.The saw streets 108 do not contain integrated circuits. The saw streets108 define non-active areas of the substrate whereat the substrate isdivided into individual dies 105.

FIG. 2 shows a side view of a partial substrate, e.g., a wafer, 200 thatincludes a plurality of dies 205. The dies 205 include integratedcircuits (not shown) that are fabricated using techniques known in theart, such as etching, lithography, deposition, doping, etc. A portion210 of the substrate 200, herein defined as the back, does not containintegrated circuits. The back portion 210 acts as base for supportingthe active area that contains integrated circuits. The back portionincludes a back surface 211 that comes into contact with substratehandling equipment (not shown) during fabrication. A saw street 208 isformed intermediate the dies 205. A mechanical cutter 215 is alignedwith the saw street 208 and forms a recessed, closed bottom trench 216in the saw street 208. The recessed trench 216, in an embodiment, isformed by cutting a kerf in the substrate 200 along the saw streets. Thetrenches 216, in an embodiment, extend the length of the dies 205. Thetrenches 216, in an embodiment, extend from one side of the substrate200 to the other side of the substrate 200. The trenches 216 are linear.The width of the mechanical cutter 215 defines the width of the trenches216. In an embodiment, the mechanical cutter 215 is a saw blade. In anembodiment, the saw blade is a circular saw blade that is mounted to arotational drive such as an electric motor (not shown). The saw bladealong its outer cutting circumference includes a diamond material. Inoperation, the mechanical cutter 215 is aligned with a saw street 208outside the outer boundary of the substrate 200. The cutter 215 is firstbrought into contact with the outer boundary of the substrate 200 at thesaw street 208. Mechanical cutter 215 and the substrate 200 relativelyand linearly move such that the cutter forms the trench 216 in thesubstrate. In an embodiment, the cutter 215 is stationary and thesubstrate 200 moves relative to the cutter 215. In an embodiment, thesubstrate 200 is stationary and the cutter 215 moves relative to thesubstrate. The cutter 215 is positioned so that it cuts through a topsurface 221 into the body of the substrate 200. The top surface 221 isthe surface of the substrate 200 wherein and whereon active integratedcircuits are fabricated. However, the cutter 215 does not cut completelythrough the base portion 210 of the substrate. That is, the cutter 215when creating the trenches 216 does not cut through back surface 211. Inan embodiment, the cutter cuts into the base portion 210 of thesubstrate. This results in the trenches 216 being open at the substratetop surface 221 and being closed at the bottom of the trench, which isspaced upwardly from the substrate back surface 211. Accordingly, thecutter 215 forms the trenches 216 to about half the thickness of thesubstrate 200. In an embodiment, the cutter 215 forms the trenches toover half the thickness of the substrate 200. In an embodiment, thecutter 215 forms the trenches to about two-thirds the thickness of thesubstrate 200. In an embodiment, the cutting process described herein isrepeated for each of the saw streets. In an embodiment, the cuttingprocess described herein is repeated for only those saw streets 208 thatextend in a same direction or that are parallel. In this embodiment, thesaw streets that are transverse to the same direction saw streets 208that include trenches 216 are not cut.

FIG. 3 shows a substrate 300 after further processing of the FIG. 2substrate 200. A mechanical cutter 315 is positioned adjacent thenonactive substrate back portion 310 containing back side 311 of thesubstrate 300. In an embodiment, the substrate 200 is flipped after thetop trenches 216 are formed. In an embodiment, the substrate 300 is inthe same orientation as the FIG. 2 substrate 200 and the mechanicalcutter 315 is positioned beneath the substrate. The mechanical cutter315 includes the same embodiments as described herein for mechanicalcutter 215. Cutter 315 is aligned with the outer boundary of substrate300 and first contacts and begins cutting at the outer edge of thesubstrate 300. The cutter 315 cuts at least one back trench or kerf 326,which is shown on the top of FIG. 3. The term “back” refers to a back orbase area of a wafer or substrate on which integrated circuit layers areformed and that supports the active area and does not contain activeintegrated circuit components. The back trench 326 is at least to halfthe thickness of the substrate 300. The back trench 326 is about halfthe thickness of the substrate 300. The back trench 326 is less thanabout half the thickness of the substrate 300. In an embodiment, theback trench 326 is about one-third the thickness of the substrate 300.In an embodiment, a plurality of back trenches 326 are formed beneath anactive area of a die 205. The back trenches 326 are cut at a differentangle than the top trenches 316. Specifically, the directions of the ICfabrication side trenches 316 and the back trenches 326 are transverseto each other. In an embodiment, the directions of the trenches 316 and326 are orthogonal. In an embodiment, the directions of the trenches 316and 326 are at about 90 degrees with respect to each other. In anembodiment, directions of the trenches 316 and 326 are at about 45degrees with respect to each other. In an embodiment, directions of thetrenches 316 and 326 are at an angle of greater than about 45 degreeswith respect to each other. In an embodiment, directions of the trenches316 and 326 are at an angle greater than about 10 degrees with respectto each other. The trench(es) 326 are formed at a depth that causes themto physically cross at least one of the top trench(es) 316 atintersections 327. These intersections 327 form through holes(apertures) that extend from the substrate first, top side 311 to thesubstrate second, back side 321. However, the substrate 300 remains in alarge scale form factor, e.g., wafer. That is, a plurality of dies 305remain connected to each other through the non-cut back region 310 ofsubstrate 300. In an embodiment, the back trenches 326 are parallel tosome of the top trenches 316 formed in saw streets.

FIG. 4 shows a substrate 400 according to the present invention.Substrate 400 includes a plurality of die 405 separated by saw streets408A and 408B. Saw streets 408A extend in a first direction. Saw streets408B extend in a second direction generally perpendicular to saw streets408A. Top trenches 416 are formed in saw streets 408A. A plurality ofback trenches 426 are formed in the back portion of substrate 400. Eachof the back trenches 426 extend under a plurality of dies 405 that arelinearly aligned in the second direction. A plurality of back trenches426 extend under each aligned die 405 and intersect each of the toptrenches 416 that extend transverse to the direction of the backtrenches 426. Through vias 427 are formed at the intersections of thetop and back trenches 416, 426. The back trenches 426, in theillustrated embodiment, extend parallel to the second direction sawstreets 408B. Accordingly, back trenches 426 do not form intersectionsor through vias with any trench or kerf formed in the saw streets 408B.In the illustrated embodiment, no trenches are formed in the saw streets408B.

FIG. 5 shows a top perspective view of a substrate 500 according to anembodiment of the present invention. Substrate 500 includes a pluralitydies 505 bound on two parallel sides by saw streets 508B and on theother two parallel sides by trenches 516. In an embodiment, the trenches516 are top kerfs formed by mechanical cutting. The back, nonactivedevice portion of substrate 500 is mechanically cut to form backtrenches 526. In an embodiment, the back trenches 526 are kerfs asdescribed herein. The top trenches 516 and back trenches 526 intersectat 527 to form through vias extending completely through substrate 500,i.e. from the top side to the back side. Each of the dies 505 furtherincludes bond pads 530. Bond pads 530 are conductive contacts that areelectrically connected to the integrated circuits of die 505. The bondpads 530 form connectors to circuits external to the die 505. In anembodiment, the bond pads 530 are connected to leads in a package (notshown). Bond pads 530 are formed by metalization of a nonmasked area ofthe wafer 500. Bond pads 530 are formed inwardly from the edges of die505, the edges being defined by saw streets 508B and top trenches 516.The bond pads 530 are formed in a line essentially centered on die. Thatis, each bond pad 530 is equal distant from the two trenches 516 thatbound the two opposite sides of the generally rectangular die. Further,the bond pads 530 are positioned inwardly on the die 505 from the sawstreets 508B, which as shown in FIG. 5 are not cut or trenched.

FIG. 6 shows a back perspective view of a substrate 600, which is thesame as substrate 500. Substrate 600 includes a plurality of activecircuit side trenches or kerfs 616 and a plurality of non-active circuitside trenches or kerfs 626. The trenches 616 and 626 extend transverseto each other, essentially perpendicular as shown in FIG. 6, andintersect at 627 to form the through vias.

The width of the top trenches 216, 316, 416, 516, in an embodiment, areformed by using a mechanical cutter 215 or 315. The width of the toptrenches (kerfs) are equal to the width of the mechanical cutter.Accordingly, the mechanical cutter only makes a single pass on thesubstrate 200, 300, 400, 500 or 600 to form one kerf. The kerf width416W, 516W, in an embodiment, is about 200 micrometers. The kerf width416W, 516W, in an embodiment, is greater than about 200 micrometers. Thewidth of the back trenches 326, 426, 526 are equal to the widths of thetop trenches. In an embodiment, the width of the top trenches aregreater than the width of the back trenches.

FIG. 7A shows a partial substrate 700 that includes a full die 705 boundbetween two top trenches 716, which in turn abut two outer dies 705 thatare partially shown. Dies 705 each include bonding pads 730 that arepositioned in a line along the center of the die in its longitudinaldimension. Bonding pads 730 are positioned on the substrate top surface721. In an embodiment, bonding pads 730 are not positioned on the backsubstrate surface as the integrated circuits in the die do not extendinto the non-active back portion of the substrate. Bonding pads 730 arepositioned longitudinally from top to bottom in the FIG. 7A embodiment.The bonding pads are equal distance from the sides of the die 705 asdefined by the trenches 716. Traces 731 extend from the bonding pads 730to edge contacts 732. Traces 731, in an embodiment, are formed by thirdmetallization processes. The edge contacts 732 are formed by depositinga conductive material in the through vias 727. Accordingly, edgecontacts 732 extend from the substrate top surface 721 to the substrateback surface (not shown in FIG. 7A). The edge contacts 732 thus areformed in the substrate top surface trenches 716 and in the substrateback surface trenches (not shown in FIG. 7A). Accordingly, electricallycommunication to the integrated circuits in dies 705 are made fromeither side of the substrate 700 through the edge contacts 732 formed inthe through vias 727, and through the traces 731 and bond pads on thesubstrate top surface 721.

In an embodiment, the substrate 700 is coated with a non-conductivematerial except on the bonding pads 730, the area whereat the traces 731are formed and the through vias 727. In an embodiment, the traces 731are formed on top of the non-conductive material layer. Examples of thenon-conductive material include polymides, organic encapsulant, andbenzocyclobutenes. The traces 731 and through vias 727 are formed in theareas free of the non-conducting material. The individual dies 705 areseparated from the adjacent dies by dicing along saw street 708B andcompleting the cut through the substrate at top trench 716. In anembodiment, the dicing of the die 705 is performed by mechanicallycutting. In an embodiment, dicing is performed by laser. In anembodiment, dicing is performed by water jet.

FIG. 7B shows an embodiment of the substrate 700, which is similar tothe substrate shown in FIG. 7A except some traces 731B are angled withrespect to corresponding traces 731 shown in FIG. 7A. As describedherein, edge contacts 732 are formed in intersections 727. Theintersections 727 are through holes in the substrate 700 where the toptrench 716 crosses a back trench. In the FIG. 7B embodiment, some bondpads 730B are not positioned directly over a back trench. Thus, thetrace 731B that connects such bond pads 730B are angled so that the bondpads connects to an edge contact 732 formed at the same back trench asan edge contact 732 connected to an adjacent bond pad 730. This allowsthe substrate 700 to be formed with fewer back trenches than the numberof bond pads 730, 730B. In an embodiment, the contacts 732 are formed ateach end of one back trench at through vias 727. Thus, the minimumnumber of back trenches or through vias 727 is half the number of bondpads 730. In an embodiment, all of the traces 731B that extend to oneside of the die 705 are formed at an angle. The traces 731B are notperpendicular to the top trench 716 or side of the die.

FIG. 8A shows a top perspective view of a single die 805 that isseparated from a substrate, such as substrate 700 shown in FIG. 7. Thedie 805 is diced from the adjacent dies along both the saw streets inwhich a top trench was formed and the saw streets in which a trench wasnot formed. Die 805 has a corrugated back surface 811 due to theplurality of back side trenches 826 formed in the non-active portion ofthe substrate. Each of the edge contacts 832 are aligned with one of theback surface trenches 826. The die 805, in an embodiment, is packagedusing the edge contacts 832 that are accessible from the top, side orback of the die. In an embodiment, the back surface 811, which does notcontain active circuits, is ground until it is essentially planar. In anembodiment, the back surface 811 is ground to the back of the edgecontacts 832. After the back surface 811 is ground, the die 805 ispackaged. In an embodiment, the die 805 is surface mounted to a furthersubstrate. In an embodiment, the number of back trenches 826 is at leastequal to the number of bond pads 830 if the only one contact is formedin each back trench. In this embodiment, one back trench 826 is cut sothat it passes directly under one bond pad 830. One contact 832 isformed at one end of each back trench 826 at the edge of the die.

FIG. 8B shows a top perspective view of another embodiment of thepresent invention. Traces 831B extend from bond pads 830B to contacts832. The bond contacts 830B are not positioned directly above the backtrench 826. Accordingly, traces 831B extend at an angle to connect thebond pads 830B to the contacts 832. One contact 832 is formed at eachend of one trench 826. The traces 831B are at an angle relative to theedges of the die 805. The traces 831B are at an angle with respect totraces 831 and the back trenches 826. In this embodiment, a back trench826 is cut so that it passes directly beneath one bond pad 830. One edgecontact 832 is formed at each end of the back trench at both edges ofthe die 805. The traces 831 are parallel to the back trench 826 andconnect bond pad 830 to one edge contact at one edge of the die. Thetraces 831B are nonparallel to the back trench 826 and connect bond pad830B to an edge contact at the other edge of the die. The traces 831Bare parallel to each other. In this embodiment, the number of backtrenches 826 is equal to half the number of bond pads 830. Thus, thenumber of back trenches 826 that extend under a single die 805, in anembodiment according to the present invention, is in the range of equalto the number of bond pads 830, 830B to half the number of bond pads830, 830B.

FIG. 9 shows a die 905 that is similar to the die 805 shown in FIG. 8but in a back perspective view. Non-active region (back) surface 911 ofdie 905 includes a plurality of substrate back trenches 926 that areformed according to the present invention. Accordingly, the back surface911 has a corrugated appearance. Aligned with the back trenches 926 areedge contacts 932. The die 905 is representative of one of the pluralityof dies that form a substrate or wafer during fabrication. However, forscale of illustration only a single die 905 is shown in FIG. 9.Additional dies would be connected along the sides of die 905, forexample, substrates and wafers as described above.

FIG. 10 shows a portion 1035 of die 905 including one back side trench1026 and a region of the substrate adjacent the back side trench, whichregion has not been cut to form the back side trench 1026. It will berecognized that this portion 1035 repeats itself to form a complete die,for example, die 905 as shown in FIG. 9. Trench 1026 is a recess thathas a closed interior surface 1036 defined by the removed, e.g., cut,volume of the substrate and sides 1037 defined by the uncut region ofthe substrate. Edge contacts 1032 are formed at each end of thesubstrate portion 1035 aligned with and at the ends of the back sidetrench 1026. The edge contacts 1032 do not extend into the trench 1026but include enough area to form a side contact. The back surface 1039 ofthe edge contact 1032 is essentially coplanar with the trench interiorsurface 1036.

FIG. 11 shows the FIG. 10 die portion 1035 after further processing. Dieportion 1135 includes a back contact pad 1140 in the recessed trench1126 in physical and electrical contact with a back surface of the edgecontact 1132. In an embodiment, one contact pad 1140 is formed at eachend of the trench 1126. The contact pad 1140 is on a portion of therecessed trench interior surface 1136. The back contact pad 1140provides back contacts that electrically connect to the bond pads (notshown in FIG. 11) of the integrated circuit through edge contacts 1132and traces (not shown in FIG. 11). The back contacts 1140 are formed bydepositing a conductor in the trench. In an embodiment, the back surfaceof the substrate is masked then the conductor material is deposited inthe unmasked portions in the trench 1126 which correspond to the contactpads areas at the end of the trench. In an embodiment, the substrateback surface is covered by a dielectric except at the edge contacts1132. The conductor material is then deposited in an area at the edgecontacts 1132 and in physical and electrical contact with the edgecontact to form back contacts 1140. In an embodiment, back contacts areformed by third metal redistribution. In an embodiment, the conductivematerial covers the substrate back surface and is then etched awayexcept for the back contacts 1140.

FIG. 12 shows a back view of a portion 1245 of the substrate after afurther processing of the substrate portion 1135 as shown in FIG. 11.The portion 1245 includes both substrate regions that are adjacent andupraised relative to the back trench 1226. The substrate portion 1245includes the trench 1226 with one edge contact 1232 aligned with eachend of the trench. One back contact 1240 is formed in each end of thetrench 1226. The upraised substrate back surface 1242, which is upraisedrelative to both the trench 1226 and the back contacts 1240 is subjectedto back grinding to bring the back contacts 1240 into generally planarrelationship to the substrate back surface 1242. That is, the substrateregions adjacent the trench 1226 that were not cut are removed so thatthe die has a back surface that is essentially flush with the backcontacts 1240.

FIG. 13A shows a top view of a finished die 1305 according to thepresent invention. Die 1305 includes a plurality of bond pads 1330 thatare I/O pads, which connect the integrated circuits internal to the dieto external circuits (not shown). A trace 1331 connects each bond pad1330 to an edge contact 1332. The edge contacts 1332 include a portionon the top surface of the die and a portion on the side of the dieextending from the die top surface to the die back surface. In anembodiment, the die 1305 includes at least one upstanding, conductivecontact 1350 on at least one of the edge contacts 1332. In anembodiment, the contact 1350 is a ball contact. In an embodiment, theball contact is a solder ball. In an embodiment, each of the edgecontacts 1332 is connected to a contact 1350. Die 1305 has a pluralityof traces that are generally parallel to each other and perpendicular tothe sides of the die. Accordingly, die 1305 has back trenches (notshown) that only have one edge contact 1332 formed in alignmenttherewith. Thus, the number of back trenches is equal to the number ofbond pads and traces in this embodiment.

FIG. 13B shows a top perspective view of a finished die 1305. The dieincludes pairs of contacts 1332 that are aligned with each other andpositioned at opposite edges of the die 1305. One of the pair ofcontacts is connected to a bond pad 1330 through a trace 1331 that isalso aligned with the pair of edge contacts 1332. The other of the pairof contacts is connected by a trace 1331B to a bond pad 1330B that isnot aligned with the pair of contacts. The trace 1331B extends at anangle with respect to the edge of the die 1305 and with respect to thetrace 1331. In an embodiment, the number of contacts 1332 are equal onboth edges of the die 1305. The number of back trenches (not shown inFIG. 13B) is less than the number of bond pads 1330 as side contacts1332 are formed at both ends of at least one trench. In an embodiment,each back trench includes one contact 1332 at each end of the trench.Accordingly, the number of back trenches formed in die 1305 is equal tohalf the number of bond pads 1330.

FIG. 14 shows a back view of a finished die 1405 according to thepresent invention. Die 1405 includes a plurality of edge contacts 1432that extend from the die top surface to the die back surface. Aplurality of back contacts 1440 are connected to the plurality of edgecontacts 1432. Each edge contact 1432 is connected to one back contact1440. Thus, the die 1405 includes contacts on the die top surface, dieedge surface and the die back surface. One back contact 1440 is formedat each end of back trench 1426. In an embodiment, a contact 1450 ispositioned on at least one back contact 1440. In an embodiment, contact1450 is a solder ball. In an embodiment, each back contact 1440 has acontact 1450 thereon.

FIG. 15 shows a die stack 1555 that includes a plurality of dies 1505electrically connected together. A die stack 1555 expands the functionalcapacity of the dies 1505. In an embodiment, each of the dies 1505include memory devices. Thus, the die stack 1555 expands the memorycapacity over a single die 1505. The contacts 1550 connect an upperdie's substrate active surface contacts (not shown, but designated aboveas X32, where X is the figure number) to a lower dies non-active circuitside contacts 1540. The top most die 1505 as shown in FIG. 15 has itsnon-active, back substrate surface contacts 1540 free from othercontacts. These contacts 1540, in an embodiment, are used to connect thedie stack 1555 to an external circuit (not shown). The lower most die1505 shown in FIG. 15 has its contacts 1550 free from contacting anotherdie 1505. In an embodiment, these contacts 1550 connect the wafer stackto an external circuit (not shown). Thus, the dies 1505 having contactson the top and back surface allow the dies to connected to adjacent diessuch that the die stack 1555 has a profile that is essentially equal tothe profile of the dies constituting the stack 1555 and the contacts1550 intermediate adjacent dies. In an embodiment, contacts 1555 arecontrolled collapse connections that have a low profile, i.e., height.This provides a small stack height that is essentially the sum of thethicknesses of the dies 1505. In an embodiment, the back contacts 1550connect the die stack to a BGA or other chip connect structure.

FIG. 16 shows two wafers 1600, the top wafer being inverted relative tothe bottom wafer such that the active device side or surface of thewafers 1600 face each other. Thus, the active device regions of dies1605 of both wafers 1600 face each other. While not shown in FIG. 16 forreasons of clarity, each die 1605 includes bonding pads and traces thatinterconnect the bonding pads to edge contacts formed in through viasaccording to the teachings of the present invention. In an embodiment,the top portions of edge contacts on one of the wafers 1600 includeconnectors (not shown) that provide a direct connect to the top portionsof the edge contacts on the other wafer 1600. Accordingly, each die 1605of one wafer is electrically and physically connected to one die of theother wafer. Each wafer 1600 includes a plurality of through vias thatare filled with a conductive material, thus the integrated circuits ofeach die 1605 is electrically accessible through the conductive materialin the through vias. In an embodiment, the trough via connections form aportion of the edge contact. In an embodiment, back contacts asdescribed herein are connected to the edge contacts. Thus, the backsurface of at least one of the wafers 1600 is adapted to connected to anexternal circuit. Accordingly, the present invention provides contactsand connections to the dies through the vias formed according to thepresent invention such that external connections are made through thebackside of at least one of the wafers 1600.

It will be recognized that it is with the scope of the present inventionto connect the two wafers 1600 together by other methods known to one ofskill in the art. For example, the wafers 1600, and the dies on eachwafer, are connected by an anisotropic conductive film.

In an embodiment, at least one of the wafers 1600 is subjected to backgrinding to further thin the wafer according to the teachings of thepresent invention. This causes the contacts formed by conductivematerial in the through vias or back contacts formed in the trenches1626 to be at the back surface of the at least one wafer 1600. Thus, thewafer 1600 can be mounted in its non-singulated state.

In an embodiment, the stacked and connected wafers 1600 are singulatedor diced such that the interconnected, facing dies remain joinedtogether. Thus, the individual units each include two dies, one die fromeach of the two wafers. The external circuit is connected to theseindividual units at the edge contacts in an embodiment. In anembodiment, the external circuit is connected to these individual unitsat the back contacts.

FIG. 17A shows a cross-sectional, partial view of substrate stack thathas two substrates 1700. The cross-section is taken generally alongvertically-aligned, back side trenches 1726 of the two stacked substrate1700. Each substrate 1700 includes at least two die 1705. The two die ofthe top substrate are positioned directly above the two die of thebottom substrate. Bond pads 1730 are formed on the active circuit sideof the dies 1705. The bond pads 1730 of the bottom die are aligned withbond pads of the die that is positioned above the bottom die. Traces1731 extend from the bond pads 1730 outwardly to the side of the die1705. Edge contacts 1732 are formed aligned with the non-active sidetrench intermediate the dies 1705 that are formed on the same substrate.In the embodiment shown, the dies at the bottom are formed on the samesubstrate and the dies at the top are formed on the same substrate. Thenon-active side trenches cross the active side trenches 1716 atintersections to form through holes 1727 that extend from the top to theback of the respective substrate and die. The through holes 1727 arefilled with conductive material and connect to non-active side contacts1740. The dies 1705 thus are interconnected at the vertically alignedbond pads 1730 and vertically aligned traces 1731. Contacts 1740 atnon-active sides of the connected, vertically aligned dies 1705 provideconnections to external circuits (not shown).

FIG. 17B shows a cross-sectional, partial view of substrate 1700generally along line 17B-17B of FIG. 17A. The line 17B-17B generallyfollows active circuit side trenches 1716 of both substrates, whichtrenches 1716 are vertically aligned.

FIG. 18 shows a die stack that includes two die 1805 that are stackedtop side to top side. That is, the active areas of the two die areadjacent one another. The two die 1805 are joined together as discussedabove in a wafer form in an embodiment. Thus, the top die 1805 is from adifferent substrate or wafer than the bottom die 1805. Then, the joinedwafers are diced to separate pairs of dies 1805 from adjacent pairs ofdies. The through vias 1827 are aligned between the dies 1805 and areseparated when the joined dies are separated from the adjacent dies. Thevias 1827 are filed with a conductive material such that the vias withconductive material for interconnection between the two, joined die1805. The vias 1827 filled with conductive material further define edgecontacts and back contacts that connect the stacked dies 1805 toexternal circuits (not shown).

FIG. 19 shows a top view of a package 1970 according to the presentinvention. The package 1970 includes one of a die, die stack, or waferstack that includes back contacts 1940. The die is encapsualted in aprotective case that seals the active area from the environment.Connectors 1972 extend through the protective case and electricallycontact the back contacts 1940. Connectors 1972 further connect to leads1974 that allow the package 1970 to connect to external circuits, whichinclude address and data buses and control circuits.

A method for fabricating a wafer level package according to anembodiment of the present invention includes fabricating an active areaon a substrate. The active area includes integrated circuits. In anembodiment, the integrated circuits form memory devices. In anembodiment, the integrated circuits perform logic functions or processortasks. In an embodiment, the active area is a system on a chip devicethat includes logic functions and memory functions. The saw streetsintermediate the integrated circuits are partially cut in a firstdirection to form trenches or kerfs. The non-active regions of thesubstrate, generally beneath the integrated circuits or dies arepartially cut to form non-active side or back trenches or kerfs. In anembodiment, a plurality of cuts in the non-active regions of thesubstrate are made to form a plurality of non-active side trenches.Where the active side trenches and non-active side trenches intersectthere are formed through vias in the substrate. These through viasprovide holes, which when filled with a conductive material providecontacts on both the active (top) surface of the substrate and thenon-active (back) surface of the substrate.

Numerous devices are adaptable for use with a wafer level package asdescribed herein. Such devices include individual IC packages, sometimesreferred to as chips, circuit modules, memory modules, and computers andelectronic systems. Individual IC packages include a die having anindividual pattern, typically rectangular, on a substrate that containscircuitry, or integrated circuit devices, to perform a specificfunction, such as memory functions, logic functions, and addressfunctions. A semiconductor wafer will typically contain a repeatedpattern of such dies containing the same functionality. The individualIC package includes structures of the present invention or ismanufactured according to the methods of the present invention. Theindividual IC package, in an embodiment, further contains additionalcircuitry to extend to such complex devices as a monolithic processorwith multiple functionality and/or a processor and memory module in asingle IC package. Individual IC packages typically include a protectivecasing (not shown) with leads extending therefrom (not shown) providingaccess to the circuitry of the IC package for unilateral or bilateralcommunication and control. In an embodiment, the leads are connected tothe edge contacts, ball contacts or other contacts as described herein.

Circuit modules include two or more dies that are combined, with orwithout protective casing. Such a combination enhances or extends thefunctionality of an individual die. The circuit module includes acombination of dies representing a variety of functions, or acombination of dies containing the same functionality. One or more diesof circuit module contain structures according to the present inventionor are formed by methods of the present invention. Some examples of acircuit module include memory modules, device drivers, power modules,communication modems, processor modules and application-specific (ASIC)modules, and may include multilayer, multichip modules. The circuitmodule is, in an embodiment, a subcomponent of a variety of electronicsystems, such as a clock, a television, a cell phone, a personalcomputer, personal data assistant, an automobile, an industrial controlsystem, an aircraft and others. The circuit module has a variety ofleads extending therefrom and coupled to the dies providing unilateralor bilateral communication and control.

One form of a circuit module is a memory module. The memory modulecontains multiple memory IC devices on support, the number of IC devicesgenerally depending upon the desired bus width and the desire forparity. The memory module accepts a command signal from an externalcontroller (not shown) on a command link and provides for data input anddata output on data links. The command link and data links are connectedto leads extending from the support. The memory module and/or the diesthat constitute at least part of the memory module include structures ofthe present invention or are formed according to methods of the presentinvention.

Electronic systems include one or more circuit modules. An electronicsystem generally contains a user interface that communicates with anelectronic unit, that processes or stores electrical information. Theuser interface provides a user of the electronic system with some formof control or observation of the results of the electronic unit. Someexamples of user interface include the keyboard, pointing device,monitor or printer of a personal computer; the tuning dial, display orspeakers of a radio; the ignition switch, gauges or gas pedal of anautomobile; and the card reader, keypad, display or currency dispenserof an automated teller machine. The user interface, in an embodiment,provides access ports provided to electronic unit. Access ports are usedto connect an electronic unit to the more tangible user interfacecomponents previously exemplified. One or more of the circuit modulesinclude a processor providing some form of manipulation, control ordirection of inputs from or outputs to user interface, or of otherinformation either preprogrammed into, or otherwise provided to, theelectronic unit. As will be apparent from the lists of examplespreviously given, electronic system is, in an embodiment, associatedwith certain mechanical components (not shown) in addition to thecircuit modules and the user interface. It will be appreciated that theone or more circuit modules in the electronic system are replaced by asingle integrated circuit in an embodiment. In an embodiment, theelectronic system is a subcomponent of a larger electronic system. Itwill also be appreciated that at least one of the memory modulesincludes structures according to the present invention or is formedaccording to methods according to the present invention.

A specific embodiment of an electronic system as a memory system. Thememory system includes one or more memory modules and a memorycontroller. The memory modules each contain one or more memory ICdevices. In an embodiment, at least one of memory devices includesstructures according to the present invention or is fabricated accordingto the present invention. The memory controller provides and controls abidirectional interface between memory system and an external systembus. The memory system accepts a command signal from the external busand relays it to the one or more memory modules on a command link. Thememory system provides for data input and data output between the one ormore memory modules and external system bus on data links.

Another specific embodiment of an electronic system as a computersystem. The computer system includes a processor and a memory systemhoused in a computer unit. The computer system is but one example of anelectronic system containing another electronic system, i.e., the memorysystem, as a subcomponent. The computer system optionally contains userinterface components. User interface components include, but are notlimited to a keyboard, a pointing device, a monitor, a printer and abulk storage device. It will be appreciated that other components areoften associated with computer system such as modems, device drivercards, additional storage devices, etc. It will further be appreciatedthat the processor and the memory system of the computer system, in anembodiment, are incorporated on a single die or IC package. Such singlepackage processing units reduce the communication time between theprocessor and the memory circuit. It will be appreciated that at leastone of the processor and the memory system contain an IC packageaccording to the present invention

The above description refers to numerous views of substrates thatillustrate embodiments of the present invention. These views are, attimes, drawn to an enlarges, simplified scale to illustrate the presentinvention. For example, the saw streets and dies shown in FIG. 4 areshown in a greater enlarges scale. Hundreds of die are formed on asingle substrate. The saw streets are formed as small as possible toallow more dies to be formed on a single substrate.

CONCLUSION

The forming of the through vias or apertures as described hereinprovides a true wafer level package, e.g., a chip profile. That is, asignificant space savings is achieved by producing a small package size.The dimensions of the through vias are determined by the size of themechanical cutters used to form the partial cuts in the substrate. Thatis, with a saw blade, the width of the blade making the cut in thesubstrate top surface determines one dimension (e.g., length). The widthof a blade making the cut in the substrate back surface determinesanother dimension (e.g., width). Accordingly, the dimensions of the viacan be made as small as the width of saw blades. In an embodiment, adimension of the via is about 0.2 mm. The techniques described hereinprovide a low cost and an industrial acceptable method to producethrough vias compared to conventional etching and laser drilltechniques. As a result, space savings are achieved in packaging asubstrate according to the present invention.

1. A method of forming contacts for an integrated circuit, comprising:providing a substrate with at least one integrated circuit; forming afirst trench in the top side of the substrate; forming a second trenchin the back side of the substrate so that the second trench crosses thefirst trench to form a through via; inserting a conductor in the throughvia to form an electrical contact on both the top side and the backside; positioning a bond pad on the top side; and connecting the bondpad to the conductor.
 2. The method of claim 1, wherein positioning thebond pad includes positioning the bond pad directly above the secondtrench, and wherein connecting the bond pad to the conductor includesforming a trace, which is parallel to the second trench, on thesubstrate.
 3. The method of claim 1, wherein positioning the bond padincludes positioning the bond pad not directly above the second trench,and wherein connecting the bond pad to the conductor includes forming atrace, which is skew to the second trench, on the substrate.
 4. A methodof forming contacts for an integrated circuit, comprising: providing asubstrate with at least one integrated circuit; forming a first trenchin the top side of the substrate; forming a second trench in the backside of the substrate so that the second trench crosses the first trenchto form a through via; inserting a conductor in the through via toextend from the top side to the back side; positioning a bond pad on thetop side; connecting the bond pad to the conductor; and forming a backside contact, which is connected to the conductor, at one end of thesecond trench.
 5. The method of claim 4, wherein forming the firsttrench includes mechanically cutting the top side of the substrate to adepth that is at least half the thickness of the substrate and less thanthe thickness of the substrate.
 6. The method of claim 5, whereinforming the second trench includes mechanically cutting the back side ofthe substrate to a depth that is at least half the thickness of thesubstrate and less than the thickness of the substrate.
 7. A method offorming contacts for an integrated circuit, comprising: providing asubstrate with at least one integrated circuit; forming a first trenchin the top side of the substrate; forming a second trench in the backside of the substrate so that the second trench crosses the first trenchto form a through via; inserting a conductor in the through via toextend from the top side to the back side; positioning a bond pad on thetop side; connecting the bond pad to the conductor; forming a back sidecontact, which is connected to the conductor, at one end of the secondtrench; and backgrinding the back side of the substrate so that the backside is essentially coplanar to the back side contact.
 8. The method ofclaim 7, wherein forming the first trench includes mechanically cuttingthe top side of the substrate to a depth that is at least half thethickness of the substrate and less than the thickness of the substrate.9. The method of claim 8, wherein forming the second trench includesmechanically cutting the back side of the substrate to a depth that isat least half the thickness of the substrate and less than the thicknessof the substrate.
 10. The method of claim 8, wherein providing thesubstrate includes providing a memory device.
 11. A method of forming asubstrate level package of two integrated circuit devices, comprising:providing a first substrate including a plurality of first integratedcircuit devices separated by streets; forming first trenches in thestreets on a top side of the first substrate; forming second trenches onthe backside of the first substrate so that the second trenches andfirst trenches intersect to form through vias from the top side to thebackside of the first substrate; inserting a conductor into the throughvias to form contacts on the top side and the backside; connecting theconductor to at least one of the plurality of first integrated circuitdevices; providing a second substrate including a plurality of secondindividual integrated circuit devices separated by streets; connectingthe plurality of second integrated circuit devices to the firstplurality of integrated circuit devices; and separating connected pairsof the connected first integrated circuit devices and second integratedcircuit devices from the other pairs of connected first integratedcircuit devices and second integrated circuit devices.
 12. The method ofclaim 11, wherein providing a second substrate includes forming thirdtrenches in the streets on a top side of the second substrate; formingfourth trenches on the backside of the second substrate so that thethird and fourth trenches intersect to form through vias from the topside to the backside of the second substrate; inserting a conductor intothe through vias to form contacts on the top side and the backside; andconnecting the conductor to at least one of the plurality of secondintegrated circuit devices.
 13. The method of claim 12, wherein formingthe third trench includes forming the third trench to a depth of overhalf the thickness of the second substrate, and wherein forming thefourth trenches includes forming the fourth trench to a depth of overhalf the thickness of the second substrate.
 14. The method of claim 13,wherein forming the fourth trenches includes forming a plurality offourth trenches beneath at least one of the second integrated circuitdevices.
 15. The method of claim 14, wherein the fourth trenches arelinear.
 16. The method of claim 12, wherein forming the first trenchincludes forming the first trench to a depth of over half the thicknessof the first substrate, and wherein forming the second trenches includesforming the second trench to a depth of over half the thickness of thefirst substrate.
 17. The method of claim 16, wherein forming the secondtrenches includes forming a plurality of second trenches beneath atleast one of the second integrated circuit devices and each of theplurality of second trenches intersects the first trench.
 18. The methodof claim 17, wherein the second trenches are linear.
 19. The method ofclaim 12, wherein connecting the plurality of second integrated circuitdevices to the first plurality of integrated circuit devices includesaligning dies in the first substrate with dies in the second substrateand connecting bond pads of the die on the first substrate to bond padsof the die on the second substrate.
 20. The method of claim 12, whereinseparating connected pairs of the connected first integrated circuitdevices and second integrated circuit devices includes simultaneouslydicing the first substrate and the second substrate into pairs of diesthat are connected at the respective bond pads.
 21. The method of claim20, wherein connecting the plurality of second integrated circuitdevices to the first plurality of integrated circuit devices includesbackgrinding the joined first substrate and the second substrate.
 22. Amethod of forming a substrate level package of two integrated circuitdevices, comprising: providing a first substrate including a pluralityof first dies separated by streets, the first dies including bond padson an active side of the substrate and traces connected to the bondpads; forming first trenches in the streets on a top side of the firstsubstrate; forming second trenches on the backside of the firstsubstrate so that the second trenches and first trenches intersect toform through vias from the top side to the backside of the firstsubstrate; inserting a conductor into the through vias to form contactson the top side and the backside; connecting the conductor to at leastone of the bond pads using one of the traces; providing a secondsubstrate including a plurality of second individual integrated circuitdevices separated by streets; connecting the plurality of secondintegrated circuit devices to the first plurality of integrated circuitdevices; and separating connected pairs of the connected firstintegrated circuit devices and second integrated circuit devices fromthe other pairs of connected first integrated circuit devices and secondintegrated circuit devices.
 23. The method of claim 22, wherein formingsecond trenches on the backside includes forming second trenchesparallel to traces.
 24. The method of claim 23, wherein forming thesecond trenches includes forming the second trenches essentiallyperpendicular to respective ones of the through vias.
 25. The method ofclaim 24, wherein forming the second trenches includes mechanicallycutting the backside of the substrate.
 26. The method of claim 22,wherein providing the first substrate includes providing a wafer havinga plurality of memory devices.
 27. The method of claim 22, whereinproviding a second substrate includes providing a plurality of seconddies separated by streets, the second dies including bond pads on anactive side of the second substrate and second traces connected to thebond pads; forming third trenches in the streets on a top side of thesecond substrate; forming fourth trenches on the backside of the secondsubstrate so that the third and fourth trenches intersect to formthrough vias from the top side to the backside of the second substrate;inserting a conductor into the through vias of the second substrate toform contacts on the top side and the backside of the second substrate;and connecting the conductor of the second substrate to at least one ofthe bond pads of the second substrate using the second traces.
 28. Themethod of claim 27, wherein the plurality of second integrated circuitdevices to the first plurality of integrated circuit devices includesconnecting the traces of the first substrate to traces of the secondsubstrate.
 29. The method of claim 27, wherein the plurality of secondintegrated circuit devices to the first plurality of integrated circuitdevices includes connecting the bond pads of the first substrate to bondpads of the second substrate.
 30. The method of claim 27, whereinforming fourth trenches on the backside includes forming fourth trenchesparallel to respective traces of the second substrate.
 31. The method ofclaim 27, wherein forming the fourth trenches includes forming thefourth trenches essentially perpendicular to respective ones of thethrough vias of the second substrate.
 32. The method of claim 31,wherein forming the fourth trenches includes mechanically cutting thebackside of the second substrate.
 33. The method of claim 27, whereinproviding the second substrate includes providing a wafer having aplurality of memory devices.
 34. A method of forming a substrate levelpackage of two integrated circuit devices, comprising: providing a firstsubstrate including a plurality of first integrated circuit devicesseparated by streets; forming first trenches in the streets on a topside of the first substrate; forming second trenches on the backside ofthe first substrate so that the second trenches and first trenchesintersect to form through vias from the top side to the backside of thefirst substrate; inserting a conductor into the through vias to formcontacts on the top side and the backside; connecting the conductor toat least one of the plurality of first integrated circuit devices;providing a second substrate including a plurality of second individualintegrated circuit devices separated by streets; connecting theplurality of second integrated circuit devices to the first plurality ofintegrated circuit devices; separating connected pairs of the connectedfirst integrated circuit devices and second integrated circuit devicesfrom the other pairs of connected first integrated circuit devices andsecond integrated circuit devices; encapsulating a pair of the connectedfirst integrated circuit device and second integrated circuit device;and providing contacts to the pair of the connected first integratedcircuit device and second integrated circuit device at the backside ofone of the pair.
 35. The method of claim 34, wherein connecting includesaligning the active side of the first substrate to the active side ofthe second substrate.
 36. The method of claim 35, wherein connecting theplurality of second integrated circuit devices to the first plurality ofintegrated circuit devices includes connecting bond pads of the secondsubstrate to bond pads of the first substrate.
 37. The method of claim34, wherein connecting the plurality of second integrated circuitdevices to the first plurality of integrated circuit devices includesconnecting traces of the second substrate to traces of the firstsubstrate.
 38. The method of claim 34, wherein connecting the pluralityof second integrated circuit devices to the first plurality ofintegrated circuit devices includes connecting the conductors in thethrough vias of the second substrate to conductors in the through viasof the first substrate.
 39. A method for joining dies of a firstsubstrate to dies of a second substrate, comprising: providing aplurality of first dies separated by saw streets on the first substrate;providing a plurality of second dies separated by saw streets on thesecond substrate; forming through vias the first substrate; placing aconductor in the through vias; connecting the conductor in the throughvias to integrated circuits of the first substrate; forming contacts onthe backside of the first substrate connected to the conductor; aligningthe saw streets of the first substrate with the saw streets of thesecond substrate; connecting a first die with a second die that isaligned active side to active side with the first die; and separatingthe connected first die and second die from a remainder of the first andsecond substrates.
 40. The method of claim 39, wherein separatingincludes cutting the first and second substrates along the aligned sawstreets.
 41. The method of claim 40, wherein cutting includes lasercutting.
 42. The method of claim 40, wherein cutting includes cuttingwith a saw blade.
 43. The method of claim 40, wherein cutting includescutting with a water jet.
 44. The method of claim 39, wherein formingthrough vias includes forming a first trench in the saw streets in afirst direction and forming a plurality of second trenches on thebackside of the first substrate in a second direction so that the firsttrench intersects the second trenches to form the through vias.
 45. Themethod of claim 44, wherein forming the first trench includesmechanically cutting the saw streets.
 46. The method of claim 45,wherein forming the second trenches includes mechanically cutting thebackside of the first substrate directly beneath the first dies.
 47. Themethod of claim 44, wherein forming contacts on the backside of thefirst substrate includes forming contacts in the second trenches. 48.The method of claim 47, wherein forming contacts includes backgrindingthe first substrate to form a back surface substantially planar to thecontacts in the second trenches.
 49. A die, comprising: a substrate; anactive area on the substrate; an insulation layer on the active area;first and second bond pads on the insulation layer and electricallyconnected to the active area; a first contact; a second contact; a firsttrace connecting the first bond pad to the first contact; and a secondtrace connecting the second bond pad to the second contact, the secondtrace being nonparallel to the first trace.
 50. The die of claim 49,wherein the second trace is coplanar with the first trace.
 51. The dieof claim 49, wherein the first trace is linearly aligned with the secondcontact and the first contact.
 52. The die of claim 51, wherein thefirst trace is enlongate.
 53. The die of claim 49, wherein the firsttrace is linearly aligned with the first contact and the first bond pad.54. The die of claim 53, wherein the first trace is enlongate.
 55. Thedie of claim 49, wherein the first trace and the second trace are notconnected.
 56. The die of claim 49, wherein the active area includes amemory device.
 57. The die of claim 49, wherein the active area includesa memory device and a logic device.
 58. A die, comprising: a substratehaving a first edge and a second edge opposite the first edge; an activearea on the substrate; a first recess in the first edge; a first contactin the first recess; a second recess in the second edge; a secondcontact in the second recess; a first bond pad on the substrate andelectrically connected to the active area; a second bond pad on thesubstrate and electrically connected to the active area; a first traceconnecting the first bond pad to the first contact; and a second traceconnecting the second bond pad to the second contact.
 59. The die ofclaim 58, wherein the first recess extends from a top surface of thesubstrate to a back surface of the substrate.
 60. The die of claim 59,wherein the first contact extends from the top surface of the substrateto the back surface of the substrate so that electrical connection tothe active area can be made from either the top surface or the backsurface.
 61. The die of claim 60, wherein the first contact is open atthe first edge so that electrical connection to the active area can bemade from the first edge.
 62. A die, comprising: a substrate; aplurality of bond pads on the substrate; a plurality of pairs ofcontacts on the substrate, wherein a first contact of the pairs islinearly aligned in a first direction with a second contact of the pairand a first bond pad of the plurality of bond pads; a first traceconnecting the first contact to the first bond pad; and a second traceconnecting a second bond pad of the plurality of bond pads to the secondcontact.
 63. The die of claim 62, wherein the first trace is linearlyaligned with the first bond pad and the first edge contact.
 64. The dieof claim 63, wherein the second bond pad is offset from the first bondpad in a second direction that is different than the first direction.65. The die of claim 64, wherein the plurality of pairs of contactsinclude edge contacts.
 66. The die of claim 65, wherein the plurality ofpairs of contacts include back contacts.
 67. The die of claim 66,wherein the plurality of pairs of contacts include top contacts.